Flexible IGZO TFTs deposited on PET substrates using magnetron radio frequency co-sputtering system
نویسندگان
چکیده
The structure of the flexible IGZO TFTs was deposited on PET substrates using a magnetron radio frequency co-sputtering system at a low temperature. The resulting flexible IGZO TFTs exhibited the lower subthreshold swing value of 0.25 V/decade and the higher field-effect mobility of 24.4 cm/V-s. The field-effect mobility stability was measured by a bending radius of 1.17 cm under stress time for 1500 seconds. The experimental result revealed that the varied stability was less than 5%. The interface state density between the gate insulator and the channel layer was about 2.13×10 eVcm in which verified the better interface quality of the flexible IGZO TFTs.
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